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FF200R17KE3_S4 Infineon IGBT

FF200R17KE3_S4

  • Model: FF200R17KE3_S4
  • 163 Units in Stock
  • Manufactured by: Infineon

Description of FF200R17KE3_S4

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:600 V
Collector-Emitter Saturation Voltage:2.2 V
Continuous Collector Current at 25 C:70 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:250 W
Maximum Operating Temperature:+ 125 C
Package / Case:EconoPACK 2A
Packaging:Reel
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw

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