>

FF225R12ME4 Infineon IGBT

FF225R12ME4

  • Model: FF225R12ME4
  • 227 Units in Stock
  • Manufactured by: Infineon

Description of FF225R12ME4

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Triple Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:2.6 V
Continuous Collector Current at 25 C:2900 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:13.9 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM
Maximum Gate Emitter Voltage:20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw

Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, or submit RFQ to Email info@igbtexpress.com or sales@jitcomp.com, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity

Related Infineon IGBT product

FF225R12ME3FF225R12ME3
FF225R12MS4 FF225R12MS4
Copyright © 2024 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.