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FF300R12KE3_B2 Infineon IGBT

FF300R12KE3_B2

  • Model: FF300R12KE3_B2
  • 85 Units in Stock
  • Manufactured by: Infineon

Description of FF300R12KE3_B2

Manufacturer:Infineon
RoHS:RoHS Compliant
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:35 A
Gate-Emitter Leakage Current:180 nA
Power Dissipation:200 W
Maximum Operating Temperature:+ 150 C
Package / Case:EconoPACK 2
Packaging:Reel
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw

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