FF450R17IE4 Infineon IGBT

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FF450R17IE4

Model: FF450R17IE4
127 Units in Stock
Manufactured by: Infineon

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Description of FF450R17IE4

Description

The Powerex Dual Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of two Darlington Transistors with each transistor having a reverse parallel connected high-speed diode.

Key Parameters Absolute Maximum Ratings

Ratings	Symbol	KD421215A7	Units
Junction Temperature	T_j	-40 to 150	°C
Storage Temperature	T_stg	-40 to 125	°C
Collector-Emitter Sustaining Voltage, V_BE = -2V	V_CEV(sus)	1200	Volts
Collector-Base Voltage	V_CBO	1200	Volts
Emitter-Base Voltage	V_EBO	7	Volts
Collector-Emitter Voltage, V_BE = -2V	V_CEV	1200	Volts
Continuous Collector Current	I_C	150	Amperes
Diode Forward Current	I_FM	150	Amperes
Continuous Base Current	I_B	8	Amperes
Diode Surge Current	I_FSM	1500	Amperes
Power Dissipation, (Each Transistor)	P_t	1000	Watts
Max. Mounting Torque M5 Terminal Screws	-	26	in-lb
Max. Mounting Torque M6 Mounting Screws	-	26	in-lb
Modular Weight (Typical)	-	470	Grams
V Isolation	V_RMS	2500	Watts