FF600R12ME4 Infineon IGBT

larger image

FF600R12ME4

Model: FF600R12ME4
191 Units in Stock
Manufactured by: Infineon

No Datasheet
Get a Quote

Description of FF600R12ME4

Description

The Powerex Dual Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of two Darlington Transistors with each transistor having a reverse parallel connected high-speed diode.

Key Parameters Absolute Maximum Ratings

Ratings	Symbol	KD621220	Units
Junction Temperature	T_j	-40 to 150	°C
Storage Temperature	T_stg	-40 to 125	°C
Collector-Emitter Sustaining Voltage, V_BE = -2V	V_CEV(sus)	1200	Volts
Collector-Base Voltage	V_CBO	1200	Volts
Emitter-Base Voltage	V_EBO	7	Volts
Collector-Emitter Voltage, V_BE = -2V	V_CEV	1200	Volts
Continuous Collector Current	I_C	200	Amperes
Diode Forward Current	I_FM	200	Amperes
Continuous Base Current	I_B	10	Amperes
Diode Surge Current	I_FSM	2000	Amperes
Power Dissipation, (Each Transistor)	P_t	1560	Watts
Max. Mounting Torque M5 Terminal Screws	-	26	in-lb
Max. Mounting Torque M6 Mounting Screws	-	26	in-lb
Modular Weight (Typical)	-	870	Grams
V Isolation	V_RMS	2500	Watts