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FF600R12ME4EB11BOSA1 Microsemi IGBT

FF600R12ME4EB11BOSA1

  • Model: FF600R12ME4EB11BOSA1
  • 473 Units in Stock
  • Manufactured by: Microsemi

Description of FF600R12ME4EB11BOSA1

CategoriesDiscrete Semiconductor Products
Transistors - IGBTs - Modules
ManufacturerInfineon Technologies
Series-
Part StatusActive
IGBT TypeTrench Field Stop
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)995A
Power - Max4050W
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 600A
Current - Collector Cutoff (Max)3mA
Input Capacitance (Cies) @ Vce37nF @ 25V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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