FP10R12NT3 Infineon IGBT

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FP10R12NT3

Model: FP10R12NT3
409 Units in Stock
Manufactured by: Infineon

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Description of FP10R12NT3

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified

Characteristics	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Thermal Resistance, Junction to Case	R_th(j-c)Q	Per IGBT 1/2 Module, T_C Reference Point per Outline Drawing	–	–	0.24	°C/W
Thermal Resistance, Junction to Case	R_th(j-c)D	Per FWDi 1/2 Module, T_C Reference Point per Outline Drawing	–	–	0.47	°C/W
Thermal Resistance, Junction to Case	R_th(j-c)'Q	Per IGBT 1/2 Module, T_C Reference Point Under Chips	–	0.16		°C/W
Contact Thermal Resistance	R_th(c-f)	Per 1/2 Module, Thermal Grease Applied	–	0.035	–	°C/W