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FP10R12W1T4_B3 Infineon IGBT

FP10R12W1T4_B3

  • Model: FP10R12W1T4_B3
  • 135 Units in Stock
  • Manufactured by: Infineon

Description of FP10R12W1T4_B3

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.1 V
Continuous Collector Current at 25 C:200 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:780 W
Maximum Operating Temperature:+ 125 C
Package / Case:62MM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:500

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