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FP10R12YT3_B4 Infineon IGBT

FP10R12YT3_B4

  • Model: FP10R12YT3_B4
  • 160 Units in Stock
  • Manufactured by: Infineon

Description of FP10R12YT3_B4

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Continuous Collector Current at 25 C:18 A
Maximum Operating Temperature:+ 125 C
Package / Case:EUPEC
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Stud
Standard Pack Qty:16

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