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FP15R12W1T4_B11 Infineon IGBT

FP15R12W1T4_B11

  • Model: FP15R12W1T4_B11
  • 174 Units in Stock
  • Manufactured by: Infineon

Description of FP15R12W1T4_B11

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Single Dual Emitter Dual Collector
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:3.2 V
Continuous Collector Current at 25 C:400 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:2700 W
Maximum Operating Temperature:+ 150 C
Package / Case:IHM130
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Standard Pack Qty:2

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