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FP25R12W2T4_B11 Infineon IGBT

FP25R12W2T4_B11

  • Model: FP25R12W2T4_B11
  • 96 Units in Stock
  • Manufactured by: Infineon

Description of FP25R12W2T4_B11

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Single Dual Collector Dual Emitter
Collector- Emitter Voltage VCEO Max:1200 V
Continuous Collector Current at 25 C:650 A
Maximum Operating Temperature:+ 125 C
Package / Case:62MM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:10

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