Low Loss DuoPack : IGBT in TrenchStop^® technology with optimised diode
Very low V_CE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5μs
TrenchStop^® and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low V_CE(sat)
Positive temperature coefficient in V_CE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC¹ for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models

¹ J-STD-020 and JESD-022

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current, limited by T_vjmax T_c = 25°C T_c = 100°C	I_C	60 30	A
Pulsed collector current, tp limited by T_jmax	I_Cpuls	90
Turn off safe operating area V_CE ≤ 600V, T_j ≤ 175°C	-	90
Diode forward current, limited by T_vjmax T_c = 25°C T_c = 100°C	I_F	23 13
Diode pulsed current, t_p limited by T_jmax	I_Fpuls	30
Gate-emitter voltage Tansient Gate-emitter voltage (t_p < 5 ms)	V_GE	±20 ±25	V
Short circuit withstand time²⁾ V_GE = 15V, VCC ≤ 400V, T_j ≤ 150°C	t_SC	5	μs
Power dissipation T_c = 25°C	P_tot	187	W
Operating junction and storage temperature	T_v_j	-40...+175	°C
Storage temperature	T_stg	-55...+175
Soldering temperature, 1.6 mm (0.063 in.) from case for 10s	_-	260