FS25R12KE3G Infineon IGBT

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FS25R12KE3G

IGBT with integrated diode in packages offering space saving advantage
TRENCHSTOP^TM Reverse Conducting (RC) technology for 600V applications offering
Optimised V_CESat and V_F for low conduction losses
Smooth switching performance leading to low EMI levels
Very tight parameter distribution
Operating range of 1 to 20kHz
Maximum junction temperature 175°C
Short circuit capability of 5µs
Best in class current versus package size performance
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant (for PG-TO252: solder temperature 260°C, MSL1)
Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current, limited by T_vjmax T_C = 25°C T_C = 100°C	I_C	12.0 6.0	A
Pulsed collector current, t_p limited by T_vjmax	I_Cpuls	18.0	A
Turn off safe operating area V_CE ≤ 600V, T_vj ≤ 175°C	-	18.0	A
Diode forward current, limited by T_vjmax T_C = 25°C T_C = 100°C	I_F	12.0 6.0	A
Diode pulsed current, t_p limited by T_vjmax	I_Fpuls	18.0	A
Gate-emitter voltage	V_GE	±20	V
Short circuit withstand time V_GE = 15.0V, V_CC ≤ 400V, T_vj ≤ 150°C Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s	t_SC	5	µs
Power dissipation T_C = 25°C	P_tot	100.0	W
Operating junction temperature	T_vj	-40...+175	°C
Storage temperature	T_stg	-55...+175	°C
Soldering temperature, wavering 1.6 mm (0.063 in.) from case for 10s for 10 s (according to JEDEC J-STA-020A)	PG-TO251-3 PG-TO252-3	260 260	°C