Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified

Characteristics	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Thermal Resistance, Junction to Case	R_th(j-c)Q	Per IGBT 1/2 Module, T_C Reference Point per Outline Drawing	–	–	0.13	°C/W
Thermal Resistance, Junction to Case	R_th(j-c)D	Per FWDi 1/2 Module, T_C Reference Point per Outline Drawing	–	–	0.18	°C/W
Thermal Resistance, Junction to Case	R_th(j-c)'Q	Per IGBT 1/2 Module, T_C Reference Point Under Chips	–	–	0.076	°C/W
Contact Thermal Resistance	R_th(c-f)	Per 1/2 Module, Thermal Grease Applied	–	0.04	–	°C/W
External Gate Resistance	R_G		1.6	–	16	Ω