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FS35R12W1T4 Infineon IGBT

FS35R12W1T4

  • Model: FS35R12W1T4
  • 107 Units in Stock
  • Manufactured by: Infineon

Description of FS35R12W1T4

Key Parameters MAXIMUM RATINGS

ParameterSymbolValueUnit
Collector-Emitter voltage , Tj=25 °CVCE1200V
DC collector current, limited by TjmaxIC1)A
Pulsed collector current, tp limited by TjmaxIcpuls330A
Gate-Emitter voltageVGE±20V
Operating junction temperatureTj-40 .. . +175°C
Short circuit data2) VGE = 15V, VCC = 800V, Tvj = 150°Ctp10µs
Reverse bias safe operating area2) (RBSOA)IC max = 220A, VCE max = 1200V, Tvj max= 150°C

1 ) depending on thermal properties of assembly

2 ) not subject to production test - verified by design/characterization


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