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FS50R06YE3 Infineon IGBT

FS50R06YE3

  • Model: FS50R06YE3
  • 276 Units in Stock
  • Manufactured by: Infineon

Description of FS50R06YE3

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.7 V
Continuous Collector Current at 25 C:300 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:2 KW
Maximum Operating Temperature:+ 150 C
Package / Case:IHM
Maximum Gate Emitter Voltage:20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw

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