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FS50R12KT4_B11 Infineon IGBT

FS50R12KT4_B11

  • Model: FS50R12KT4_B11
  • 365 Units in Stock
  • Manufactured by: Infineon

Description of FS50R12KT4_B11

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:600 V
Collector-Emitter Saturation Voltage:1.95 V
Continuous Collector Current at 25 C:32 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:250 W
Maximum Operating Temperature:+ 125 C
Package / Case:EconoPACK 2A
Maximum Gate Emitter Voltage:20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:500

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