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FS75R12W2T4_B11 Infineon IGBT

FS75R12W2T4_B11

  • Model: FS75R12W2T4_B11
  • 273 Units in Stock
  • Manufactured by: Infineon

Description of FS75R12W2T4_B11

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Triple
Collector- Emitter Voltage VCEO Max:1200 V
Continuous Collector Current at 25 C:3200 A
Maximum Operating Temperature:+ 125 C
Package / Case:IHM190
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Standard Pack Qty:1

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