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FT150R12KE3_B5 Infineon IGBT

FT150R12KE3_B5

  • Model: FT150R12KE3_B5
  • 113 Units in Stock
  • Manufactured by: Infineon

Description of FT150R12KE3_B5

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Half Bridge Module
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:3.2 V
Continuous Collector Current at 25 C:50 A
Gate-Emitter Leakage Current:150 nA
Power Dissipation:280 W
Maximum Operating Temperature:+ 150 C
Package / Case:Half Bridge1
Maximum Gate Emitter Voltage:20 V
Mounting Style:Screw
Standard Pack Qty:500

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