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FT150R12KE3G_B4 Infineon IGBT

FT150R12KE3G_B4

  • Model: FT150R12KE3G_B4
  • 398 Units in Stock
  • Manufactured by: Infineon

Description of FT150R12KE3G_B4

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1200 V
Continuous Collector Current at 25 C:1400 A
Maximum Operating Temperature:+ 150 C
Package / Case:PRIME3
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw

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