Product Image |
Item Name- |
Stock |
Price |
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Key Parameters Absolute Maximum Ratings, Tj = 25 °C Unless Otherwise SpecifiedSymbolParameterConditionsRatingsUnitVCESCollector-emitter... |
303 |
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AC Motor Controller, 150A, Hybrid |
2 |
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IGBT POWER TRANSISTOR MODULE75 Amp 1200 Volt |
18 |
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Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector... |
300 |
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AC Motor Controller, 100A, Hybrid |
1 |
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AC Motor Controller, 100A, Hybrid |
77 |
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Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector... |
297 |
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Fuji power module600V, 150A |
2 |
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AC Motor Controller, 300A, Hybrid |
15 |
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IGBT power transistor module |
23 |
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AC Motor Controller, 200A, Hybrid |
25 |
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Description Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to... |
319 |
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Description Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to... |
316 |
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Description Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge... |
313 |
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Description M57962L is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate amplifier application. This device... |
310 |
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307 |
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|
304 |
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Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector... |
301 |
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|
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Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector... |
298 |
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Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Packaging :Bulk Standard Pack Qty :6 |
295 |
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Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Quad Collector- Emitter Voltage VCEO Max :600 V Continuous Collector Current... |
314 |
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Description Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge... |
311 |
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Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel |
100 |
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Manufacturer:Â Fuji |
2000 |
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Manufacturer:Â Fuji |
2000 |
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Manufacturer:Â Fuji |
2000 |
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Insulated Gate Bipolar Transistor, 900A I(C), 1700V V(BR)CES, N-Channel |
328 |
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Insulated Gate Bipolar Transistor, 780A I(C), 600V V(BR)CES |
200 |
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308 |
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Manufacturer:Â Fuji |
2000 |
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