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FZ1000R33HE3ENG Infineon IGBT

FZ1000R33HE3ENG

  • Model: FZ1000R33HE3ENG
  • 392 Units in Stock
  • Manufactured by: Infineon

Description of FZ1000R33HE3ENG

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Single
Collector- Emitter Voltage VCEO Max:3300 V
Collector-Emitter Saturation Voltage:3.4 V
Continuous Collector Current at 25 C:1300 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:9.6 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:8

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