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FZ1200R17KF4C Infineon IGBT

FZ1200R17KF4C

  • Model: FZ1200R17KF4C
  • 251 Units in Stock
  • Manufactured by: Infineon

Description of FZ1200R17KF4C

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:2.6 V
Continuous Collector Current at 25 C:650 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:3.3 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM
Maximum Gate Emitter Voltage:20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:2

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