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FZ1800R17HP4_B29 Infineon IGBT

FZ1800R17HP4_B29

  • Model: FZ1800R17HP4_B29
  • 141 Units in Stock
  • Manufactured by: Infineon

Description of FZ1800R17HP4_B29

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Single
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:1.7 V
Continuous Collector Current at 25 C:480 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:1450 W
Maximum Operating Temperature:+ 125 C
Package / Case:EUPEC
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Stud
Standard Pack Qty:500

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