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FZ800R12KE3 Infineon IGBT

FZ800R12KE3

  • Model: FZ800R12KE3
  • 155 Units in Stock
  • Manufactured by: Infineon

Description of FZ800R12KE3

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

CharacteristicsSymbolTest ConditionsMin.Typ.Max.Units
Thermal Resistance, Junction to CaseRth(j-c)QPer IGBT 1/2 Module––0.14°C/W
Thermal Resistance, Junction to CaseRth(j-c)DPer FWDi 1/2 Module––0.24°C/W
Thermal Resistance, Junction to CaseRth(j-c')QPer IGBT 1/2 Module*––0.08°C/W
Contact Thermal ResistanceRth(c-f)Per Module, Thermal Grease Applied–0.04–°C/W

*TC measured point is just under the chips.


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