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FZ800R12KE3HOSA1 Microsemi IGBT

FZ800R12KE3HOSA1

  • Model: FZ800R12KE3HOSA1
  • 257 Units in Stock
  • Manufactured by: Microsemi

Description of FZ800R12KE3HOSA1

CategoriesDiscrete Semiconductor Products
Transistors - IGBTs - Modules
ManufacturerInfineon Technologies
Series*
Part StatusActive
IGBT TypeTrench Field Stop
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)800A
Power - Max3550W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 800A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce56nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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