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FZ900R12KE4 Infineon IGBT

FZ900R12KE4

  • Model: FZ900R12KE4
  • 178 Units in Stock
  • Manufactured by: Infineon

Description of FZ900R12KE4

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:RoHS Compliant
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:600 V
Collector-Emitter Saturation Voltage:2.2 V
Continuous Collector Current at 25 C:100 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:355 W
Maximum Operating Temperature:+ 125 C
Package / Case:34MM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:500

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