GA200SA60S Vishay IGBT

larger image

GA200SA60S

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Breakdown Voltage	600	V
I_C @ T_C = 25°C	Continuous Collector Current	200	A
I_C @ T_C = 100°C	Continuous Collector Current	100
I_CM	Pulsed Collector Current	400
I_LM	Clamped Inductive Load Current	400
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	155	mJ
V_ISOL	RMS Isolation Voltage, Any Terminal to Case, t=1 min	2500	V
P_D @ T_C = 25°C	Maximum Power Dissipation	630	W
P_D @ T_C = 100°C	Maximum Power Dissipation	250	W
T_J	Operating Junction	-55 to +150	°C
T_STG	Storage Temperature Range	-55 to +150	°C
	Mounting Torque, 6-32 or M3 Screw 12	12 lbf •in (1.3N•m)