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GT10G131(TE12L,Q) Toshiba IGBT

GT10G131(TE12L,Q)

  • Model: GT10G131(TE12L,Q)
  • 740 Units in Stock
  • Manufactured by: Toshiba

Description of GT10G131(TE12L,Q)

Category

Discrete Semiconductor Products

Family

Transistors - IGBTs - Single

Manufacturer

Toshiba Semiconductor and Storage

Series-
PackagingTape & Reel (TR)
Part StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.3V @ 4V, 200A
Power - Max1W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C3.1µs/2µs
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.173", 4.40mm Width)
Supplier Device Package8-SOP (5.5x6.0)

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