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GT50J121(Q) Toshiba IGBT

GT50J121(Q)

  • Model: GT50J121(Q)
  • 537 Units in Stock
  • Manufactured by: Toshiba

Description of GT50J121(Q)

Category

Discrete Semiconductor Products

Family

Transistors - IGBTs - Single

Manufacturer

Toshiba Semiconductor and Storage

Series-
PackagingTube
Part StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 50A
Power - Max240W
Switching Energy1.3mJ (on), 1.34mJ (off)
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C90ns/300ns
Test Condition300V, 50A, 13 Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PL
Supplier Device PackageTO-3P(LH)

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