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GT60N321(Q) Toshiba IGBT

GT60N321(Q)

  • Model: GT60N321(Q)
  • 956 Units in Stock
  • Manufactured by: Toshiba

Description of GT60N321(Q)

Category

Discrete Semiconductor Products

Family

Transistors - IGBTs - Single

Manufacturer

Toshiba Semiconductor and Storage

Series-
PackagingTube
Part StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 60A
Power - Max170W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C330ns/700ns
Test Condition-
Reverse Recovery Time (trr)2.5µs
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PL
Supplier Device PackageTO-3P(LH)

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