IGP20N60H3 Infineon IGBT

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IGP20N60H3

Model: IGP20N60H3
391 Units in Stock
Manufactured by: Infineon

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Description of IGP20N60H3

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters

Absolute Maximum Ratings

Ratings	Symbol	CM600DU-24F	Units
Junction Temperature	Tj	-40 to 150	°C
Storage Temperature	Tstg	-40 to 125	°C
Collector-Emitter Voltage (G-E SHORT)	VCES	1200	Volts
Gate-Emitter Voltage (C-E SHORT)	VGES	±20	Volts
Collector Current (T_c = 25°C)	IC	600	Amperes
Peak Collector Current	ICM	1200*	Amperes
Emitter Current** (T_c = 25°C)	IE	600	Amperes
Peak Emitter Current**	IEM	1200*	Amperes
Maximum Collector Dissipation (T_c = 25°C, T_j ≤ 150°C)	Pc	1540	Watts
Mounting Torque, M8 Main Terminal	-	95	in-lb
Mounting Torque, M6 Mounting	-	40	in-lb
G(E) Terminal, M4	-	15	in-lb
Weight	-	1200	Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)	Viso	2500	Volts

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).