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IGW25N120H3 Infineon IGBT

IGW25N120H3

  • Model: IGW25N120H3
  • 393 Units in Stock
  • Manufactured by: Infineon

Description of IGW25N120H3

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

CharacteristicsSymbolTest ConditionsMin.Typ.Max.Units
Thermal Resistance, Junction to CaseRth(j-c)QPer IGBT 1/2 Module––0.083°C/W
Thermal Resistance, Junction to CaseRth(j-c)DPer FWDi 1/2 Module––0.13°C/W
Contact Thermal ResistanceRth(c-f)Per Module, Thermal Grease Applied–0.010–°C/W
Thermal ResistanceRth(j-c')Q
 Tc Measured Point
(Under Chips - IGBT Part)
––0.035*°C/W

* If you use this value, Rth(f-a) should be measured just under the chips.


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