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IKCS12F60B2A Infineon IGBT

IKCS12F60B2A

  • Model: IKCS12F60B2A
  • 107 Units in Stock
  • Manufactured by: Infineon

Description of IKCS12F60B2A

Key Parameters

Absolute Maximum Ratings (TC=25°C)

ItemSymbolUnitValue
Collector-Emitter VoltageVCESV1,200
Gate-Emitter VoltageVGESV±20
Collector CurrentDCICA150
1msICp300
Forward Current DCIFA150     *1             
1msIFM300
Collector Power DissipationPc
W
1000
Junction TemperatureTj°C-40 ~ +150
Storage TemperatureTstg°C-40 ~ +125
Isolation Voltage
VISOVRMS2,500 (AC 1 minute)
Screw Torque Terminals
-N·m 1.96   *2             
Mounting
 1.96   *3             

Notes; *1 : RMS current of diode ≤ 45 Arms
           *2 ,*3 : Recommended value 1.67 N·m


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