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IKCS12F60F2C Infineon IGBT

IKCS12F60F2C

  • Model: IKCS12F60F2C
  • 95 Units in Stock
  • Manufactured by: Infineon

Description of IKCS12F60F2C

Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)

ItemsSymbolsConditionsMaximum ratingsUnits
InverterCollector-Emitter voltageVCES
1200V
Gate-Emitter voltageVGES
±20V
Collector currentIcContinuousTc=80°C150A
Icp1msTc=80°C300
-Ic
150
-Ic pulse1ms300
Collector power dissipationPc1 device885W
BrakeCollector-Emitter voltageVCES
1200V
Gate-Emitter voltageVGES
±20V
Collector currentICContinuousTc=80°C100A
ICP1msTc=80°C200
Collector power dissipationPC1 device520W
Repetitive peak reverse voltage (Diode)VRRM
1200V
ConverterRepetitive peak reverse voltageVRRM
1600V
Average output currentIO50Hz/60Hz, sine wave150A
Surge current (Non-Repetitive)IFSM

10ms, Tj=150°C

half sine wave

780A
I2t (Non-Repetitive)I2t3000A2s
Junction temperatureTjInverter, Brake175°C
Converter150

Operating junction temperature (under switching conditions)

TjopInverter, Brake150
Converter150
Case temperatureTc
125
Storage temperatureTstg
-40 to +125
Isolation voltage

between terminal and copper base (*1)

between thermistor and others (*2)

VisoAC : 1min.2500VAC
Screw torqueMounting (*3)-M53.5N m

Note *1: All terminals should be connected together during the test.

Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.

Note *3: Recommendable value: 2.5-3.5 Nm (M5)


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