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88 |
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Description Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three... |
86 |
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KEY PARAMETERS Absolute Maximum Ratings (TC=25°C) Item Symbol Unit MDM750H65E2 Repetitive Peak Reverse VoltageVRRMV6,500Forward... |
121 |
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ParametricsDF900R12IP4DVConfigurationChopperDimensions (width)89 mmDimensions (length)172 mmHousingPrimePACK™ 2IC(nom) /... |
834 |
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Description Powerex Dual IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT... |
214 |
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Description Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three... |
260 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Hex Collector- Emitter Voltage VCEO Max :600 V Continuous Collector Current at 25... |
335 |
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Manufacturer :Infineon |
203 |
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Item Number: DF200R12KE3 Manufacturer: Infineon Item Category: Transistors Subcategory: IGBTs Type: Single Vces: 1,200 Volts DC ... |
236 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Array 7 Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector Current... |
119 |
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Description Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three... |
238 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Array 7 Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector Current... |
326 |
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Manufacturer :Infineon |
368 |
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CategoriesDiscrete Semiconductor ProductsTransistors - IGBTs - ModulesManufacturerInfineon TechnologiesSeries-Part StatusNot For New DesignsIGBT... |
573 |
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94 |
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Manufacturer :Infineon |
124 |
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Key Parameters Absolute Maximum Ratings (T C =25°C) Item Symbol Unit MBM1200E17D Collector Emitter Voltage VCES V 1,700 Gate Emitter Voltage... |
119 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Hex Collector- Emitter Voltage VCEO Max :600 V Continuous Collector Current at 25... |
175 |
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CategoriesDiscrete Semiconductor ProductsTransistors - IGBTs - ModulesManufacturerInfineon TechnologiesSeries-Part StatusActiveIGBT... |
635 |
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Key Parameters Absolute Maximum Ratings (T C =25°C) Item Symbol Unit MBM600E17D Collector Emitter Voltage VCES V 1,700 Gate Emitter Voltage... |
127 |
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Manufacturer:Â Infineon |
500 |
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Discrete Semiconductor Modules 6.3KV 600A |
21 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Array 7 Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector Current... |
190 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS : Product :IGBT Silicon Modules Configuration :Array 7 Collector- Emitter Voltage VCEO Max... |
175 |
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ParametricsDD1200S12H4ConfigurationDiodesDimensions (width)140 mmDimensions (length)130 mmHousingIHM BIC(nom) /... |
465 |
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Manufacturer :Infineon |
164 |
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Key Parameters MAXIMUM RATINGS (Tc=25°C) Item Symbol Rated Value ... |
158 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS :No Product :IGBT Silicon Modules Configuration :Dual Collector- Emitter Voltage VCEO Max... |
177 |
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Manufacturer :Infineon |
413 |
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Manufacturer :Infineon |
179 |
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