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MBL1200E17D Hitachi IGBT

MBL1200E17D

  • Model: MBL1200E17D
  • 328 Units in Stock
  • Manufactured by: Hitachi

Description of MBL1200E17D

KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Tj=25oC, unless otherwise noted)

SymbolParameterConditionsRatingsUnit
VCEX (SUS)Collector-emitter voltageIC=1A, VEB=2V1200V
VCEXCollector-emitter voltageVEB=2V1200V
VCBOCollector-base voltageEmitter open1200V
VEBOEmitter-base voltageCollector open7V
ICCollector currentDC300A
–ICCollector reverse currentDC (forward diode current)300A
PCCollector dissipationTC=25oC1980W
IBBase currentDC16A
–ICSMSurge collector reverse current
(forward diode current)
Peak value of one cycle of 60Hz (half wave)3000A
TjJunction temperature –40~+150oC
TstgStorage temperature –40~+125oC
VisoIsolation voltageCharged part to case, AC for 1 minute2500V
Mounting torqueMain terminal screw M61.96~2.94N.m
20~30kg.cm
Mounting screw M61.96~2.94N.m
20~30kg.cm
B(E) terminal screw M40.98~1.47N.m
10~15kg.cm
BX terminal screw M40.98~1.47N.m
10~15kg.cm
WeightTypical value470g


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