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MBL800E33C Hitachi IGBT

MBL800E33C

  • Model: MBL800E33C
  • 332 Units in Stock
  • Manufactured by: Hitachi

Description of MBL800E33C

KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Transistor part including D1, Tj=25oC)

SymbolParameterConditionsRatingsUnit
VCEX (SUS)Collector-emitter voltageIC=1A, VEB=2V1000V
VCEXCollector-emitter voltageVEB=2V1000V
VCBOCollector-base voltageEmitter open1000V
VEBOEmitter-base voltageCollector open7V
ICCollector currentDC30A
–ICCollector reverse currentDC (forward diode current)30A
PCCollector dissipationTC=25oC310W
IBBase currentDC2A
–ICSMSurge collector reverse current
(forward diode current)
Peak value of one cycle of 60Hz (half wave)300A

KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Diode part (D2), Tj=25oC)

SymbolParameterConditionsRatingsUnit
VRRMRepetitive peak reverse voltage 1000V
VRSMNon-repetitive peak reverse voltage 1100V
VR (DC)DC reverse voltage 800V
IDCDC currentDC circuit, resistive, inductive load30A
IFSMSurge (non-repetitive) forward currentPeak value of one cycle of 60Hz (half wave)600A
I2tI2t for fusingValue for one cycle of surge current1.5 x 103A2s

KEY PARAMETERS ABSOLUTE MAXIMUM RATINGS (Common)

SymbolParameterConditionsRatingsUnit
TjJunction temperature –40~+150oC
TstgStorage temperature –40~+125oC
VisoIsolation voltageCharged part to case, AC for 1 minute2500V
Mounting torqueMain terminal screw M51.47~1.96N.m
15~20kg.cm
Mounting screw M61.96~2.94N.m
20~30kg.cm
WeightTypical value210g


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