MBN1200E17D Hitachi IGBT

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MBN1200E17D

Symbol	Parameter	Conditions	Ratings	Unit
V_{CEX (SUS)}	Collector-emitter voltage	I_C=1A, V_EB=2V	1200	V
V_CEX	Collector-emitter voltage	V_EB=2V	1200	V
V_CBO	Collector-base voltage	Emitter open	1200	V
V_EBO	Emitter-base voltage	Collector open	7	V
I_C	Collector current	DC	75	A
–I_C	Collector reverse current	DC (forward diode current)	75	A
P_C	Collector dissipation	T_C=25°C	500	W
I_B	Base current	DC	4	A
–I_CSM	Surge collector reverse current (forward diode current)	Peak value of one cycle of 60Hz (half wave)	750	A
Tj	Junction temperature		–40~+150	°C
Tstg	Storage temperature		–40~+125	°C
Viso	Isolation voltage	Charged part to case, AC for 1 minute	2500	V
—	Mounting torque	Main terminal screw M5	1.47~1.96	N·m
		Main terminal screw M5	15~20	kg·cm
		Mounting screw M6	1.96~2.94	N·m
		Mounting screw M6	20~30	kg·cm
—	Weight	Typical value	250	g