Item			Symbol	PCHMB200B12A	Unit
Collector-Emitter Voltage			V_CES	1200	V
Gate - Emitter Voltage			V_GES	+/- 20	V
Collector Current		DC	I_C	200	A
		1 ms	I_CP	400
Collector Power Dissipation			P_C	960	W
Junction Temperature Range			T_j	-40 to +150	°C
Storage Temperature Range			T_stg	-40 to +125	°C
Isolation Voltage Terminal to Base AC, 1 min.)			V_ISO	2500	V
Mounting Torque	Module Base to Heatsink		F_TOR	3	N•m
	Bus Bar to Main Terminals			2

MBN800E33E Hitachi IGBT

MBN800E33E