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MDN1200D33 Hitachi IGBT

MDN1200D33

  • Model: MDN1200D33
  • 387 Units in Stock
  • Manufactured by: Hitachi

Description of MDN1200D33

Key Parameters

Maximum Ratings (TC=25°C)

ItemSymbolPHMB1200B12Unit
Collector-Emitter VoltageVCES1200V
Gate-Emitter VoltageVGES±20V
Collector CurrentDCIC1200A
1msICP2400
Collector Power Dissipation
PC
5600W
Junction Temperature Range
Tj-40 to +150°C
Storage Temperature Range
Tstg-40 to +125°C
Isolation Voltage (Terminal to Base AC, 1 min.)
VISO2500V
Mounting Torque Module Base to Heatsink
FTOR3N·m 
Bus Bar to Main Terminals
M41.4
M610.5


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