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MG400Q1US1 Toshiba IGBT

MG400Q1US1

  • Model: MG400Q1US1
  • 305 Units in Stock
  • Manufactured by: Toshiba

Description of MG400Q1US1

Key Parameters Maximum Ratings (Ta=25°C)

CharacteristicSymbolRatingUnit
Collector-Emitter VoltageVCES1200V
Gate-Emitter VoltageVGES±20V
Collector CurrentDCIC400A
1msICP800
Forward CurrentDCIF400A
1msIFM800
Collector Power Dissipation (Ta=25°C)PC2400W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-40~125°C
Isolation VoltageVIsol2500(AC 1 min.)V
Screw Torque (Terminal M4/ M6/Mounting)-2/3/3N·m


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