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MG50J1ZS40 Toshiba IGBT

MG50J1ZS40

  • Model: MG50J1ZS40
  • 300 Units in Stock
  • Manufactured by: Toshiba

Description of MG50J1ZS40

Key Parameters Maximum Ratings (Ta=25°C)

CHARACTERISTICSYMBOLRATINGUNIT
Collector-Emitter VoltageVCES600V
Gate-Emitter VoltageVGES±20V
Collector CurrentDCIC50A
1msICP100
Forward CurrentDCIF50A
1msIFM100
Collector Power DissipationPC250W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-40~150°C
Isolation Voltage
Screw Torque (Terminal/Mounting)
VIsol
-
2500 (AC, 1 minute)
3/3
V
N·m


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