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MG50Q1ZS50 Toshiba IGBT

MG50Q1ZS50

  • Model: MG50Q1ZS50
  • 309 Units in Stock
  • Manufactured by: Toshiba

Description of MG50Q1ZS50

Key Parameters Maximum Ratings (Ta=25°C)

CHARACTERISTICSYMBOLRATINGUNIT
Collector-emitter VoltageVCES1200V
Gate-emitter VoltageVGES±20V
Collector CurrentDCIC
(25°C / 80°C)		78 / 50
A
1msICP
(25°C / 80°C)		156 / 100
Forward CurrentDCIF50A
1msIFM100
Collector power dissipation (Tc=25°C)PC400W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-40~125°C
Isolation VoltageVIsol2500 (AC 1 minute)V
Screw Torque (Terminal /Mounting)-3/3N·m


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