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MG50Q2YS50 Toshiba IGBT

MG50Q2YS50

  • Model: MG50Q2YS50
  • 312 Units in Stock
  • Manufactured by: Toshiba

Description of MG50Q2YS50

Key Parameters Maximum Ratings (Ta=25°C)

CharacteristicSymbolRatingUnit
Collector-emitter VoltageVCES1200V
Gate-emitter VoltageVGES±20V
Collector CurrentDCIC
(25°C / 80°C)		78 / 50
A
1msICP
(25°C / 80°C)		156 / 100
Forward CurrentDCIF50A
1msIFM100
Collector power dissipation
(Tc=25°C)		PC400W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-40~125°C
Isolation VoltageVIsol2500
(AC 1 minute)		V
Screw Torque (Terminal/Mounting)-3/3N·m


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