Symbol	Parameter		Conditions	Ratings	Unit
V_CES	Collector-emitter voltage			1200	V
V_GES	Gate-emitter voltage			±20	V
V_SES	Sense-emitter voltage			40	V
I_C	Collector current	DC		600	A
I_CP	Collector current	1ms		1200	A
I_F	Forward current	DC		600	A
I_FM	Forward current	1ms		1200	A
P_C	Collector power dissipation		T_C = 25°C	2750	W
T_j	Junction temperature			150	°C
T_stg	Storage temperature range			-40 ~ 125	°C
V_isol	Isolation voltage			2500 (AC 1 minute)	V
—	Screw torque	Terminal (M4/M6)		2/3	N • m
—	Screw torque	Mounting		3	N • m

MG600Q1US59A Toshiba IGBT

MG600Q1US59A