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MG75J6ES50 Toshiba IGBT

MG75J6ES50

  • Model: MG75J6ES50
  • 304 Units in Stock
  • Manufactured by: Toshiba

Description of MG75J6ES50

KEY PARAMETERS MAXIMUM RATINGS (Ta = 25oC) 

CHARACTERISTICSSYMBOLRATINGUNIT
Collector-Emitter VoltageVCES600V
Gate-Emitter VoltageVGES+20V
Collector CurrentDCIC75A
1msICP150
Forward CurrentDCIF75A
1msIFM150
Collector Power Dissipation (Tc=25oC)PC390W
Junction TemperatureTj150oC
Storage Temperature RangeTstg-40~125oC
Isolation VoltageVIsol2500 (AC 1 min.)V
Screw Torque (Terminal/Mounting)-2/3N.m

 


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