MIG20J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI (silicon-on-insulator) process drives these directly in response to a PWM signal. Moreover, since high-voltage level-shifter is built in high-voltage IC, while being able to perform a direct drive without the interface with which the upper arm IGBT is insulated, the drive power supply of an upper arm can be driven with a bootstrap system, and the simplification of a system is possible. Furthermore, each lower arm emitter terminal has been independent so that detection can perform current detection at the time of vector control by current detection resistance of a lower arm. The protection function builds in Under Voltage Protection, Short Circuit Protection, and Over Temperature Protection. Original high thermal conduction resin is adopted as a package, and low heat resistance is realized.

Features

The 4th generation trench gate thin wafer NPT IGBT is adopted.
FRD is built in.
The level shift circuit by high-voltage IC is built in.
The simplification of a high side driver power supply is possible by the bootstrap system.
Short circuit protection, over temperature protection, and the power supply under voltage protection function are built in.
Short circuit protection and over temperature protection state are outputted.
The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at the time of vector control.
Low thermal resistance by adoption of original high thermal conduction resin.

Since this product is MOS structure, it should be careful of static electricity in the case of handling.

Absolute Maximum Rating (T_j = 25°C)

Characteristics	Symbol	Rating	Unit
Power supply voltage	V_BB	450	V
	V_BB (surge)	500
	V_CC	20
	V_BS	20
Collector-emitter voltage	V_CES	600	V
Each collector current (DC)	I_C	±20	A
Each collector current (PEAK)	I_CP	±40	A
Input voltage	V_IN	5.5	V
Fault output supply voltage	V_FO	20	V
Fault output current	I_FO	15	mA
PGND-SGND voltage difference	V_PGND-SGND	±5	V
Output voltage rate of change	dv/dt	20	kV/µs
Collector power dissipation (per 1 IGBT chip) (T_c = 25°C)	P_C	43	W
Collector power dissipation (per 1 FRD chip) (T_c = 25°C)	P_C	25	W
Operating temperature	T_OPE	-20 to 100	°C
Junction temperature (Note 1)	T_j	150	°C
Storage temperature	T_stg	-40 to 125	°C
Isolation voltage (60 Hz sinusoidal, AC)	V_ISO	2500 (1 min)	Vrms
Screw torque (M3)	-	0.5	Nm

Note 1: Although a junction temperature is 150°C the own maximum moment of a power chips which it builds in this module, the average operation junction temperature for carrying out safe operation specifies it as 125°C or less.