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MIO1200-33E11 IXYS IGBT

MIO1200-33E11

  • Model: MIO1200-33E11
  • 476 Units in Stock
  • Manufactured by: IXYS

Description of MIO1200-33E11

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:2.6 V
Continuous Collector Current at 25 C:975 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:4.8 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:2

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