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MIO600-65E11 IXYS IGBT

MIO600-65E11

  • Model: MIO600-65E11
  • 483 Units in Stock
  • Manufactured by: IXYS

Description of MIO600-65E11

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.7 V
Continuous Collector Current at 25 C:1600 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:10 KW
Maximum Operating Temperature:+ 150 C
Package / Case:IHM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw

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